IRF620SPBF
  • ACTIVE
  • EAR99
Product description : P Channel 200 V 800 mΩ 50 W 14 nC Surface Mount Power Mosfet - D2PAK
SPQ:1
Datasheet :
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Minimum Operating Temperature: - 55 C
Packaging: Tube
Pd - Power Dissipation: 3 W
Package / Case: TO-263-3
Configuration: Single
Unit Weight: 0.050717 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 7.2 ns
Manufacturer: Vishay
Factory Pack Quantity: 1000
Brand: Vishay Semiconductors
RoHS:  Details
Id - Continuous Drain Current: 5.2 A
Rise Time: 22 ns
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 800 mOhms
Width: 9.65 mm
Technology: Si
Height: 4.83 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 13 ns
Length: 10.67 mm
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 19 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 200 V
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet:
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