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| 产品描述：
Transistor: N-MOSFET; unipolar; 100V; 200A; 250W; D2PAK
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| 标准包装：50 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
| Part Status | Active |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 90A, 10V |
| Power - Max | 250W |
| Supplier Device Package | DDPAK/TO-263-3 |
| Gate Charge (Qg) @ Vgs | 57nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 5060pF @ 50V |
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