MRFE6VP61K25HR6 specifications -Ameya360 electronic components purchase network


MRFE6VP61K25HR6

ACTIVE
Product description : FET RF 2CH 133V 230MHZ NI-1230
SPQ：1
Datasheet : MRFE6VP61K25HR6.pdf

Gain:	24 dB
Output Power:	1250 W
Manufacturer:	NXP
Pd - Power Dissipation:	1333 W
Factory Pack Quantity:	150
Brand:	NXP / Freescale
Package / Case:	NI-1230
Id - Continuous Drain Current:	10 uA
Vds - Drain-Source Breakdown Voltage:	133 V
Vgs - Gate-Source Voltage:	10 V
Type:	RF Power MOSFET
Maximum Operating Temperature:	+ 150 C
Operating Frequency:	1.8 MHz, 600 MHz
Packaging:	Reel
Series:	MRFE6VP61K25H
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	RF MOSFET Transistors
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Configuration:	Single
Unit Weight:	0.352740 oz
Mounting Style:	SMD/SMT

Datasheet： MRFE6VP61K25HR6.pdf

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