MMBT5551LT3G specifications -Ameya360 electronic components purchase network


MMBT5551LT3G

ACTIVE EAR99
Product description : MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23
SPQ：10000
Datasheet : MMBT5551LT3G.pdf

Collector- Base Voltage VCBO:	140 V
Collector-Emitter Saturation Voltage:	0.15 V
Minimum Operating Temperature:	- 55 C
Package / Case:	SOT-23-3
Configuration:	Single
Unit Weight:	0.050717 oz
Maximum DC Collector Current:	0.6 A
Continuous Collector Current:	0.6 A
Manufacturer:	ON Semiconductor
Transistor Polarity:	NPN
Brand:	ON Semiconductor
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	1.3 mm
Packaging:	Reel
Pd - Power Dissipation:	225 mW
Height:	0.94 mm
Mounting Style:	SMD/SMT
Emitter- Base Voltage VEBO:	6 V
Length:	2.9 mm
DC Collector/Base Gain hfe Min:	80
Series:	MMBT5551L
Factory Pack Quantity:	10000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	160 V
ECCN	EAR99

Datasheet： MMBT5551LT3G.pdf

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Stock code :	633506
Mfg name :	onsemi
MPN :	MMBT5551LT3G
Product description :	MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23

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