| MJE5731AG | ||
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| 产品描述：
MJE Series 350 V 1 A PNP Silicon Plastic Power Transistor TO-220AB
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Width: | 4.83 mm |
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| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 350 V |
| DC Collector/Base Gain hfe Min: | 30 |
| Series: | MJE5731A |
| Minimum Operating Temperature: | - 65 C |
| Factory Pack Quantity: | 50 |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 10 MHz |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Maximum DC Collector Current: | 1 A |
| Packaging: | Tube |
| Length: | 10.53 mm |
| Manufacturer: | ON Semiconductor |
| Pd - Power Dissipation: | 40000 mW |
| Transistor Polarity: | PNP |
| Brand: | ON Semiconductor |
| Package / Case: | TO-220-3 |
| Collector- Emitter Voltage VCEO Max: | 375 V |
| Height: | 15.75 mm |
| Unit Weight: | 0.211644 oz |
| Maximum Operating Temperature: | + 150 C |
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