MJE5731AG
  • ACTIVE
  • EAR99
Product description : MJE Series 350 V 1 A PNP Silicon Plastic Power Transistor TO-220AB
SPQ:1
Datasheet : --
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Width: 4.83 mm
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 350 V
DC Collector/Base Gain hfe Min: 30
Series: MJE5731A
Minimum Operating Temperature: - 65 C
Factory Pack Quantity: 50
RoHS:  Details
Product Category: Bipolar Transistors - BJT
Gain Bandwidth Product fT: 10 MHz
Configuration: Single
Mounting Style: Through Hole
ECCN EAR99
Maximum DC Collector Current: 1 A
Packaging: Tube
Length: 10.53 mm
Manufacturer: ON Semiconductor
Pd - Power Dissipation: 40000 mW
Transistor Polarity: PNP
Brand: ON Semiconductor
Package / Case: TO-220-3
Collector- Emitter Voltage VCEO Max: 375 V
Height: 15.75 mm
Unit Weight: 0.211644 oz
Maximum Operating Temperature: + 150 C
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