| MJE200STU | ||
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| 产品描述：
MJE200 Series 25 V 5 A 15 W SMT NPN Epitaxial Silicon Transistor - TO-126
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| 标准包装：1920 | ||
| 数据手册： |
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| Collector- Base Voltage VCBO: | 40 V |
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| Collector-Emitter Saturation Voltage: | 1.8 V |
| Minimum Operating Temperature: | - 65 C |
| Package / Case: | TO-126 |
| Gain Bandwidth Product fT: | 65 MHz |
| Unit Weight: | 0.026843 oz |
| Emitter- Base Voltage VEBO: | 8 V |
| DC Current Gain hFE Max: | 180 |
| Length: | 8 mm |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 1920 |
| Part # Aliases: | MJE200STU_NL |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 3.25 mm |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 15 W |
| Height: | 11 mm |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum DC Collector Current: | 5 A |
| Continuous Collector Current: | 5 A |
| DC Collector/Base Gain hfe Min: | 45 |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| ECCN | EAR99 |
| 数据手册： |
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