MJE182STU specifications -Ameya360 electronic components purchase network


MJE182STU

ACTIVE EAR99
Product description : MJE Series NPN 12.5 W 80 V 3 A Epitaxial Silicon Transistor - TO-126-3
SPQ：60
Datasheet : MJE182STU.pdf

Collector- Base Voltage VCBO:	100 V
Collector-Emitter Saturation Voltage:	1.7 V
Minimum Operating Temperature:	- 65 C
Package / Case:	TO-126
Gain Bandwidth Product fT:	50 MHz
Unit Weight:	0.026843 oz
Emitter- Base Voltage VEBO:	7 V
DC Current Gain hFE Max:	250
Length:	8 mm
Manufacturer:	Fairchild Semiconductor
Factory Pack Quantity:	1920
Part # Aliases:	MJE182STU_NL
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	3.25 mm
Packaging:	Bulk
Pd - Power Dissipation:	12.5 W
Height:	11 mm
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	3 A
Continuous Collector Current:	3 A
DC Collector/Base Gain hfe Min:	50
Transistor Polarity:	NPN
Brand:	Fairchild Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	80 V
ECCN	EAR99

Datasheet： MJE182STU.pdf

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Stock code :	629633
Mfg name :	onsemi
MPN :	MJE182STU
Product description :	MJE Series NPN 12.5 W 80 V 3 A Epitaxial Silicon Transistor - TO-126-3

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