| MJD31CG | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252-3
|
||
| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector- Base Voltage VCBO: | 100 V |
|---|---|
| Collector-Emitter Saturation Voltage: | 1.2 V |
| Minimum Operating Temperature: | - 65 C |
| Package / Case: | TO-252-3 (DPAK) |
| Gain Bandwidth Product fT: | 3 MHz |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 3 A |
| Continuous Collector Current: | 3 A |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | NPN |
| Brand: | ON Semiconductor |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 6.22 mm |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.56 W |
| Height: | 2.38 mm |
| Configuration: | Single |
| Emitter- Base Voltage VEBO: | 5 V |
| Length: | 6.73 mm |
| DC Collector/Base Gain hfe Min: | 25 |
| Series: | MJD31C |
| Factory Pack Quantity: | 75 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| ECCN | EAR99 |
登录之后就可发表评论
请输入下方图片中的验证码：