MJD2955G specifications -Ameya360 electronic components purchase network


MJD2955G

ACTIVE EAR99
Product description : MJD Series 60 V 10 A PNP Complementary Power Transistor - TO-252-3
SPQ：1
Datasheet : MJD2955G.pdf

Collector- Base Voltage VCBO:	70 V
Collector-Emitter Saturation Voltage:	1.1 V
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-252-3 (DPAK)
Gain Bandwidth Product fT:	2 MHz
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	10 A
Continuous Collector Current:	10 A
Manufacturer:	ON Semiconductor
Transistor Polarity:	PNP
Brand:	ON Semiconductor
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	6.22 mm
Packaging:	Tube
Pd - Power Dissipation:	20 W
Height:	2.38 mm
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Length:	6.73 mm
DC Collector/Base Gain hfe Min:	20
Series:	MJD2955
Factory Pack Quantity:	75
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	60 V
ECCN	EAR99

Datasheet： MJD2955G.pdf

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Stock code :	629581
Mfg name :	onsemi
MPN :	MJD2955G
Product description :	MJD Series 60 V 10 A PNP Complementary Power Transistor - TO-252-3

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