| MJD122G | ||
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| 产品描述：
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
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| 标准包装：1 | ||
| 数据手册： |
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| Collector- Base Voltage VCBO: | 100 V |
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| Maximum Collector Cut-off Current: | 10 uA |
| Minimum Operating Temperature: | - 65 C |
| Package / Case: | TO-252-3 (DPAK) |
| Configuration: | Single |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain hFE Max: | 12000 |
| Continuous Collector Current: | 8 A |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | NPN |
| Brand: | ON Semiconductor |
| Product Category: | Darlington Transistors |
| Maximum Operating Temperature: | + 150 C |
| Width: | 6.22 mm |
| Packaging: | Tube |
| Pd - Power Dissipation: | 20 W |
| Height: | 2.38 mm |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 8 A |
| Length: | 6.73 mm |
| DC Collector/Base Gain hfe Min: | 1000 |
| Series: | MJD122 |
| Factory Pack Quantity: | 75 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| ECCN | EAR99 |
| 数据手册： |
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