MJ11012G specifications -Ameya360 electronic components purchase network


MJ11012G

ACTIVE EAR99
Product description : MJ Series 60 V 30 A NPN High Current Darlington Silicon Transistor - TO-204AA
SPQ：100
Datasheet : MJ11012G.pdf

Width:	26.67 mm
Emitter- Base Voltage VEBO:	5 V
Collector- Base Voltage VCBO:	60 V
Length:	39.37 mm
Manufacturer:	ON Semiconductor
Pd - Power Dissipation:	200 W
Transistor Polarity:	NPN
Brand:	ON Semiconductor
Package / Case:	TO-204-2 (TO-3)
Collector- Emitter Voltage VCEO Max:	60 V
Configuration:	Single
Maximum Operating Temperature:	+ 150 C
Maximum DC Collector Current:	30 A
Packaging:	Tray
Continuous Collector Current:	30 A
DC Collector/Base Gain hfe Min:	200, 1000
Series:	MJ11012
Minimum Operating Temperature:	- 55 C
Factory Pack Quantity:	100
RoHS:	Details
Product Category:	Darlington Transistors
Height:	8.51 mm
Mounting Style:	Through Hole
ECCN	EAR99

Datasheet： MJ11012G.pdf

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Stock code :	629534
Mfg name :	onsemi
MPN :	MJ11012G
Product description :	MJ Series 60 V 30 A NPN High Current Darlington Silicon Transistor - TO-204AA

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