IRF9520SPBF specifications -Ameya360 electronic components purchase network


IRF9520SPBF

ACTIVE EAR99
Product description : Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK
SPQ：1
Datasheet : IRF9520SPBF.pdf

Minimum Operating Temperature:	- 55 C
Packaging:	Tube
Pd - Power Dissipation:	3.7 W
Package / Case:	TO-252-3
Configuration:	Single
Unit Weight:	0.050717 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	9.6 ns
Forward Transconductance - Min:	2 S
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	21 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 100 V
Transistor Type:	1 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	600 mOhms
Width:	9.65 mm
Technology:	Si
Height:	4.83 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	25 ns
Length:	10.67 mm
Manufacturer:	Vishay
Factory Pack Quantity:	1000
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	- 6.8 A
Rise Time:	29 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IRF9520SPBF.pdf

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Stock code :	62400
Mfg name :	Vishay
MPN :	IRF9520SPBF
Product description :	Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK

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