Power - Max | 2.8W |
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Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 28A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 170A (Tc) |
Part Status | New Product |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Packaging | Digi-Reel® |
Package / Case | DirectFET™ Isometric MX |
FET Feature | Standard |
Supplier Device Package | DIRECTFET™ MX |
Gate Charge (Qg) @ Vgs | 42nC @ 4.5V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 4700pF @ 15V |
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