| NGTB15N60R2FG | ||
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| 产品描述：
ON Semiconductor NGTB15N60R2FG, N沟道 IGBT 晶体管, 24 A, Vce=600 V, 1MHz, 3针 TO-220F封装
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector-Emitter Saturation Voltage: | 1.85 V |
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| Continuous Collector Current Ic Max: | 14 A |
| Pd - Power Dissipation: | 54 W |
| Factory Pack Quantity: | 50 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | +/- 100 nA |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Unit Weight: | 0.211644 oz |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Packaging: | Tube |
| Manufacturer: | ON Semiconductor |
| Continuous Collector Current at 25 C: | 24 A |
| Brand: | ON Semiconductor |
| Package / Case: | TO-220-3 |
| Product Category: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 175 C |
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