LND150N3-G specifications -Ameya360 electronic components purchase network


LND150N3-G

ACTIVE 3-TO-92 EAR99
Product description : Transistor: N-MOSFET; unipolar; 500V; 0.03A; 740mW; TO92
SPQ：1
Datasheet : LND150N3-G.pdf

Package / Case	BAG
FET Feature	Depletion Mode
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	30mA (Tj)
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	10pF @ 25V
ECCN	EAR99
Rds On (Max) @ Id, Vgs	1000 Ohm @ 500µA, 0V
Power - Max	740mW
Supplier Device Package	TO-92-3
Part Status	Active
Manufacturer	Microchip Technology
Family	Transistors - FETs, MOSFETs - Single
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Bulk
SDP	3-TO-92

Datasheet： LND150N3-G.pdf

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Stock code :	581135
Mfg name :	Microchip Technology
MPN :	LND150N3-G
Product description :	Transistor: N-MOSFET; unipolar; 500V; 0.03A; 740mW; TO92

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