| KSD1691GS | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
KSD1691 Series 60 V 5 A 1.3 W NPN Epitaxial Silicon Transistor - TO-126
|
||
| 标准包装：250 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector-Emitter Saturation Voltage: | 0.1 V |
|---|---|
| Collector- Base Voltage VCBO: | 60 V |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | TO-126 |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum DC Collector Current: | 5 A |
| Length: | 8 mm |
| DC Collector/Base Gain hfe Min: | 100 |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| ECCN | EAR99 |
| Width: | 3.25 mm |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1300 mW |
| Height: | 1.5 mm |
| Unit Weight: | 0.026843 oz |
| Emitter- Base Voltage VEBO: | 7 V |
| DC Current Gain hFE Max: | 400 |
| Continuous Collector Current: | 5 A |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 2000 |
| Part # Aliases: | KSD1691GS_NL |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：