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| 产品描述：
JAN Series 80 V 1 A 500 mW Through Hole Low Power NPN Silicon Transistor - TO-18
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| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
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| Power - Max | 500mW |
| Supplier Device Package | TO-18 |
| Part Status | Active |
| Manufacturer | Microsemi IRE Division |
| Series | Military, MIL-PRF-19500/391 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| ECCN | EAR99 |
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