JAN2N3019 specifications -Ameya360 electronic components purchase network


JAN2N3019

ACTIVE TO-39 EAR99
Product description : JAN Series 80 V 1 A 800 mW Through Hole Low Power NPN Silicon Transistor - TO-5
SPQ：1
Datasheet : JAN2N3019.pdf

Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Power - Max	800mW
Supplier Device Package	TO-39
Part Status	Active
Manufacturer	Microsemi IRE Division
Series	Military, MIL-PRF-19500/391
Mounting Type	Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V
ECCN	EAR99
Package / Case	TO-205AD, TO-39-3 Metal Can
Transistor Type	NPN
Current - Collector (Ic) (Max)	1A
Category	Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)	80V
Family	Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max)	10µA (ICBO)
Packaging	Bulk

Datasheet： JAN2N3019.pdf

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Stock code :	562525
Mfg name :	onsemi
MPN :	JAN2N3019
Product description :	JAN Series 80 V 1 A 800 mW Through Hole Low Power NPN Silicon Transistor - TO-5

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