| IXYN82N120C3H1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
|
||
| 标准包装：10 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector-Emitter Saturation Voltage: | 2.75 V |
|---|---|
| Continuous Collector Current Ic Max: | 105 A |
| Series: | IXYN82N120 |
| Continuous Collector Current at 25 C: | 105 A |
| Factory Pack Quantity: | 10 |
| Tradename: | XPT |
| Package / Case: | SOT-227B-4 |
| Product Category: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Manufacturer: | IXYS |
| Pd - Power Dissipation: | 500 W |
| Minimum Operating Temperature: | - 55 C |
| Brand: | IXYS |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 100 nA |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | 30 V |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：