IXXN110N65C4H1 | ||
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产品描述:
GenX4™ XPT™ 640 V 210 A Extreme Light Punch Through IGBT - SOT227B
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标准包装:10 | ||
数据手册: |
Product: | IGBT Silicon Modules |
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Packaging: | Tube |
Series: | IXXN110N65 |
Continuous Collector Current at 25 C: | 210 A |
Factory Pack Quantity: | 10 |
Tradename: | XPT |
Package / Case: | SOT-227B-4 |
Product Category: | IGBT Modules |
Configuration: | Single Dual Emitter |
Mounting Style: | SMD/SMT |
Maximum Operating Temperature: | + 175 C |
Collector-Emitter Saturation Voltage: | 1.98 V |
Manufacturer: | IXYS |
Pd - Power Dissipation: | 750 W |
Minimum Operating Temperature: | - 55 C |
Brand: | IXYS |
RoHS: | Details |
Gate-Emitter Leakage Current: | 100 nA |
Collector- Emitter Voltage VCEO Max: | 650 V |
Unit Weight: | 1.340411 oz |
Maximum Gate Emitter Voltage: | 20 V |
ECCN | EAR99 |
数据手册: |
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