IXXH30N60B3D1
IXXH30N60B3D1
  • 量产中
  • ECL99
产品描述:
Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
标准包装:1
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Collector-Emitter Saturation Voltage: 1.66 V
Packaging: Tube
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 270 W
Gate-Emitter Leakage Current: 100 nA
Height: 21.45 mm
Unit Weight: 0.158733 oz
Length: 16.24 mm
Manufacturer: IXYS
Factory Pack Quantity: 30
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 600 V
Maximum Operating Temperature: + 175 C
Width: 5.3 mm
Continuous Collector Current at 25 C: 60 A
Operating Temperature Range: - 55 C to + 175 C
Tradename: XPT, GenX3
Package / Case: TO-247AD-3
Mounting Style: Through Hole
Continuous Collector Current Ic Max: 115 A
Continuous Collector Current: 60 A
Series: IXXH30N60
Brand: IXYS
Product Category: IGBT Transistors
Maximum Gate Emitter Voltage: +/- 20 V
ECCN ECL99
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