IXTY1R6N100D2 | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
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标准包装:70 | ||
数据手册: |
FET Feature | Depletion Mode |
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Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
Part Status | Active |
Manufacturer | IXYS |
Family | Transistors - FETs, MOSFETs - Single |
Operating Temperature | -55°C ~ 150°C (TJ) |
Packaging | Tube |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 800mA, 0V |
Power - Max | 100W |
Supplier Device Package | TO-252, (D-Pak) |
Gate Charge (Qg) @ Vgs | 27nC @ 5V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 645pF @ 25V |
ECCN | EAR99 |
数据手册: |
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