IXTX32P60P specifications -Ameya360 electronic components purchase network


IXTX32P60P

ACTIVE EAR99
Product description : Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
SPQ：1
Datasheet : IXTX32P60P.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	350 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.34 mm
Unit Weight:	0.257500 oz
Fall Time:	33 ns
Length:	16.13 mm
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	95 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 600 V
Type:	PolarP Power MOSFET
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	196 nC
Pd - Power Dissipation:	890 W
Tradename:	PolarP
Vgs th - Gate-Source Threshold Voltage:	- 4 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Typical Turn-On Delay Time:	37 ns
Forward Transconductance - Min:	21 S
Series:	IXTX32P60
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	- 32 A
Rise Time:	27 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTX32P60P.pdf

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Stock code :	562246
Mfg name :	IXYS Corporation
MPN :	IXTX32P60P
Product description :	Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns

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