| IXTT80N20L | ||
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| 产品描述：
200V, 80A, 32MOHM, TO-268
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 16.05 mm |
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| Rds On - Drain-Source Resistance: | 32 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-268-2 |
| Height: | 5.1 mm |
| Unit Weight: | 0.229281 oz |
| Fall Time: | 29 ns |
| Length: | 14 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 72 ns |
| Id - Continuous Drain Current: | 80 A |
| Rise Time: | 44 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Qg - Gate Charge: | 180 nC |
| Pd - Power Dissipation: | 520 W |
| Tradename: | Linear |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Typical Turn-On Delay Time: | 29 ns |
| Forward Transconductance - Min: | 30 S |
| Series: | IXTT80N20 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Type: | Linear Power MOSFET |
| ECCN | EAR99 |
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