IXTT6N120
IXTT6N120
  • 量产中
  • EAR99
产品描述:
Single N-Channel 1200 V 2.6 Ohm 300 W Power Mosfet - TO-268
标准包装:30
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Width: 16.05 mm
Rds On - Drain-Source Resistance: 2.6 Ohms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 5 V
Configuration: Single
Unit Weight: 0.158733 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 28 ns
Forward Transconductance - Min: 3 S
Series: IXTT6N120
Factory Pack Quantity: 30
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 6 A
Rise Time: 33 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 56 nC
Pd - Power Dissipation: 300 W
Package / Case: TO-268-2
Height: 5.1 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 18 ns
Length: 14 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 42 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 1200 V
Type: High Voltage Power MOSFET
Maximum Operating Temperature: + 150 C
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