IXTT6N120 | ||
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产品描述:
Single N-Channel 1200 V 2.6 Ohm 300 W Power Mosfet - TO-268
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标准包装:30 | ||
数据手册: |
Width: | 16.05 mm |
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Rds On - Drain-Source Resistance: | 2.6 Ohms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Configuration: | Single |
Unit Weight: | 0.158733 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 28 ns |
Forward Transconductance - Min: | 3 S |
Series: | IXTT6N120 |
Factory Pack Quantity: | 30 |
Brand: | IXYS |
RoHS: | Details |
Id - Continuous Drain Current: | 6 A |
Rise Time: | 33 ns |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Packaging: | Tube |
Qg - Gate Charge: | 56 nC |
Pd - Power Dissipation: | 300 W |
Package / Case: | TO-268-2 |
Height: | 5.1 mm |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Fall Time: | 18 ns |
Length: | 14 mm |
Manufacturer: | IXYS |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 42 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 1200 V |
Type: | High Voltage Power MOSFET |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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