IXTT30N60L2
IXTT30N60L2
  • 量产中
  • EAR99
产品描述:
N-Channel 600 V 30 A 240 mΩ Surface Mount Linear L2 Power Mosfet - TO-268
标准包装:30
数据手册:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Product: Linear L2 Power MOSFET
Rds On - Drain-Source Resistance: 240 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Mounting Style: SMD/SMT
Fall Time: 43 ns
Forward Transconductance - Min: 10 S, 18 S
Series: IXTT30N60
Factory Pack Quantity: 30
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 30 A
Rise Time: 65 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 335 nC
Pd - Power Dissipation: 540 W
Package / Case: TO-268-2
Unit Weight: 0.229281 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 43 ns
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 123 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Type: Linear L2 Power MOSFET with extended FBSOA
Maximum Operating Temperature: + 150 C
数据手册:
登录之后就可发表评论
库存信息0到货提醒
暂无任何库存信息但可询价询价

请输入下方图片中的验证码:

验证码