IXTT20N50D
IXTT20N50D
  • 量产中
  • EAR99
产品描述:
Single N-Channel 500 V 330 mOhm 400 W Power Mosfet - TO-268
标准包装:1
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Width: 16.05 mm
Rds On - Drain-Source Resistance: 330 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: - 3.5 V
Configuration: Single
Unit Weight: 0.158733 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 35 ns
Forward Transconductance - Min: 4 S
Series: IXTT20N50
Factory Pack Quantity: 30
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 20 A
Rise Time: 85 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 78.5 nC
Pd - Power Dissipation: 400 W
Package / Case: TO-268-2
Height: 5.1 mm
Vgs - Gate-Source Voltage: 30 V
Mounting Style: SMD/SMT
Fall Time: 75 ns
Length: 14 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Depletion
Typical Turn-Off Delay Time: 110 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 500 V
Type: High Voltage MOSFET
Maximum Operating Temperature: + 150 C
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库存信息2到货提醒

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库存数量23库存更新于
2025-07-08
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