| IXTT12N150 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 16.05 mm |
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| Rds On - Drain-Source Resistance: | 2 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Typical Turn-On Delay Time: | 26 ns |
| Forward Transconductance - Min: | 8 S |
| Series: | IXTT12N150 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 12 A |
| Rise Time: | 16 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Qg - Gate Charge: | 106 nC |
| Pd - Power Dissipation: | 890 W |
| Package / Case: | TO-268-2 |
| Height: | 5.1 mm |
| Unit Weight: | 0.229281 oz |
| Fall Time: | 14 ns |
| Length: | 14 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 53 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Type: | High Voltage Power MOSFET |
| ECCN | EAR99 |
| 数据手册： |
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