IXTT110N10L2
IXTT110N10L2
  • 量产中
  • EAR99
产品描述:
N-Channel 100 V 18 mOhm 600 W SMT Power Mosfet - TO-268
标准包装:30
数据手册:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Packaging: Tube
Qg - Gate Charge: 260 nC
Pd - Power Dissipation: 600 W
Package / Case: TO-268-2
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 24 ns
Forward Transconductance - Min: 55 S
Series: IXTT110N10
Factory Pack Quantity: 30
Brand: IXYS
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Transistor Type: 1 N-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 18 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Unit Weight: 0.229281 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 28 ns
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 99 ns
Id - Continuous Drain Current: 110 A
Rise Time: 130 ns
Maximum Operating Temperature: + 150 C
数据手册:
登录之后就可发表评论

Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$20.99273

174.35822

See more prices

1+$20.99273
10+$19.14704
25+$18.18058
100+$12.88914
stockOut of stock
Lead-Time24Weeks
Supplier SPQ/MOQ30/1
Location--
DateCode2034

请输入下方图片中的验证码:

验证码