| IXTT110N10L2 | ||
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| 产品描述：
N-Channel 100 V 18 mOhm 600 W SMT Power Mosfet - TO-268
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Tube |
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| Qg - Gate Charge: | 260 nC |
| Pd - Power Dissipation: | 600 W |
| Package / Case: | TO-268-2 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 24 ns |
| Forward Transconductance - Min: | 55 S |
| Series: | IXTT110N10 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Unit Weight: | 0.229281 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 28 ns |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 99 ns |
| Id - Continuous Drain Current: | 110 A |
| Rise Time: | 130 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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