| IXTQ82N25P | ||
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| 产品描述：
Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 4.9 mm |
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| Rds On - Drain-Source Resistance: | 35 mOhms |
| Configuration: | Single |
| Unit Weight: | 0.194007 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 29 ns |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 78 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Height: | 20.3 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 22 ns |
| Length: | 15.8 mm |
| Series: | IXTQ82N25 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 82 A |
| Rise Time: | 20 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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