| IXTQ60N20L2 | ||
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| 产品描述：
200V 60A 0.045 Ohm N-ch TO-3P
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| 标准包装：30 | ||
| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Packaging: | Tube |
| Manufacturer: | IXYS |
| Pd - Power Dissipation: | 540 W |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Unit Weight: | 0.194007 oz |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Typical Turn-On Delay Time: | 26 ns |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Series: | IXTQ60N20 |
| Minimum Operating Temperature: | - 55 C |
| Channel Mode: | Enhancement |
| Technology: | Si |
| Typical Turn-Off Delay Time: | 90 ns |
| Package / Case: | TO-3P-3 |
| Id - Continuous Drain Current: | 60 A |
| Configuration: | Single |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
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