| IXTQ26N50P | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Part Status | Active |
| Manufacturer | IXYS |
| Series | PolarHV™ |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 230 mOhm @ 13A, 10V |
| Power - Max | 400W |
| Supplier Device Package | TO-3P |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：