IXTQ100N25P
IXTQ100N25P
  • 量产中
  • EAR99
产品描述:
N-Channel 250 V 27 mOhm 600 W Flange Mount PolarHT Power Mosfet - TO-3P
标准包装:30
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Width: 4.9 mm
Rds On - Drain-Source Resistance: 27 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-3P-3
Height: 20.3 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 28 ns
Length: 15.8 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 100 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 250 V
Type: PolarHT Power MOSFET
Maximum Operating Temperature: + 150 C
Packaging: Tube
Qg - Gate Charge: 185 nC
Pd - Power Dissipation: 600 W
Tradename: PolarHT
Vgs th - Gate-Source Threshold Voltage: 5 V
Configuration: Single
Unit Weight: 0.194007 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 25 ns
Forward Transconductance - Min: 40 S
Series: IXTQ100N25
Factory Pack Quantity: 30
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 100 A
Rise Time: 26 ns
Transistor Type: 1 N-Channel
ECCN EAR99
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