IXTP18P10T
  • 量产中
  • TO-220AB
  • EAR99
产品描述:
Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
标准包装:1
数据手册: --
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FET Feature Standard
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Part Status Active
Manufacturer IXYS
Series TrenchP™
Vgs(th) (Max) @ Id 4.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Rds On (Max) @ Id, Vgs 120 mOhm @ 9A, 10V
Power - Max 83W
Supplier Device Package TO-220AB
Gate Charge (Qg) @ Vgs 39nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET P-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 2100pF @ 25V
ECCN EAR99
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