| IXTP120P065T | ||
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| 产品描述：
Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Tube |
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| Qg - Gate Charge: | 185 nC |
| Pd - Power Dissipation: | 298 W |
| Package / Case: | TO-220-3 |
| Vgs - Gate-Source Voltage: | 15 V |
| Mounting Style: | Through Hole |
| Fall Time: | 21 ns |
| Manufacturer: | IXYS |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 38 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 65 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | Single |
| Unit Weight: | 0.081130 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 31 ns |
| Series: | IXTP120P065 |
| Factory Pack Quantity: | 50 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 120 A |
| Rise Time: | 28 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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