| IXTN200N10L2 | ||
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| 产品描述：
N-Channel 100 V 11 mOhm 540 nC 830 W Power MOSFET - SOT-227
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| 标准包装：300 | ||
| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Forward Transconductance - Min: | 90 S/55 S |
| Manufacturer: | IXYS |
| Pd - Power Dissipation: | 830 W |
| Factory Pack Quantity: | 10 |
| Brand: | IXYS |
| Package / Case: | SOT-227-4 |
| Id - Continuous Drain Current: | 178 A |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Series: | IXTN200N10 |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Unit Weight: | 1.340411 oz |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
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