IXTN200N10L2 | ||
---|---|---|
|
||
|
||
产品描述:
N-Channel 100 V 11 mOhm 540 nC 830 W Power MOSFET - SOT-227
|
||
标准包装:300 | ||
数据手册: |
Number of Channels: | 1 Channel |
---|---|
Forward Transconductance - Min: | 90 S/55 S |
Manufacturer: | IXYS |
Pd - Power Dissipation: | 830 W |
Factory Pack Quantity: | 10 |
Brand: | IXYS |
Package / Case: | SOT-227-4 |
Id - Continuous Drain Current: | 178 A |
Vgs - Gate-Source Voltage: | 20 V |
Transistor Type: | 1 N-Channel |
Maximum Operating Temperature: | + 150 C |
Packaging: | Tube |
Rds On - Drain-Source Resistance: | 11 mOhms |
Series: | IXTN200N10 |
Transistor Polarity: | N-Channel |
Technology: | Si |
RoHS: | Details |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Unit Weight: | 1.340411 oz |
Mounting Style: | SMD/SMT |
ECCN | EAR99 |
数据手册: |
---|
请输入下方图片中的验证码: