IXTN200N10L2
  • 量产中
  • EAR99
产品描述:
N-Channel 100 V 11 mOhm 540 nC 830 W Power MOSFET - SOT-227
标准包装:300
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Number of Channels: 1 Channel
Forward Transconductance - Min: 90 S/55 S
Manufacturer: IXYS
Pd - Power Dissipation: 830 W
Factory Pack Quantity: 10
Brand: IXYS
Package / Case: SOT-227-4
Id - Continuous Drain Current: 178 A
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
Maximum Operating Temperature: + 150 C
Packaging: Tube
Rds On - Drain-Source Resistance: 11 mOhms
Series: IXTN200N10
Transistor Polarity: N-Channel
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Unit Weight: 1.340411 oz
Mounting Style: SMD/SMT
ECCN EAR99
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库存信息2到货提醒

供应商库存

线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量

库存数量290库存更新于
2025-05-20
订货周期--
SPQ/MOQ300/1
库存地--
生产批次2442

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