| IXTK46N50L | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 500 V 160 mOhm 700 W Power MOSFET - TO-264
|
||
| 标准包装：25 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 5.31 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 6 V |
| Configuration: | Single |
| Unit Weight: | 0.352740 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 40 ns |
| Forward Transconductance - Min: | 7 S |
| Series: | IXTK46N50L |
| Factory Pack Quantity: | 25 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 46 A |
| Rise Time: | 50 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 260 nC |
| Pd - Power Dissipation: | 700 W |
| Package / Case: | TO-264-3 |
| Height: | 26.59 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 42 ns |
| Length: | 20.29 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 80 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Type: | Linear Power MOSFET |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：