IXTK40P50P specifications -Ameya360 electronic components purchase network


IXTK40P50P

ACTIVE EAR99
Product description : Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; TO264
SPQ：1
Datasheet : IXTK40P50P.pdf

Number of Channels:	1 Channel
Rds On - Drain-Source Resistance:	230 mOhms
Series:	IXTK40P50
Pd - Power Dissipation:	890 W
Factory Pack Quantity:	25
Brand:	IXYS
Package / Case:	TO-264-3
Id - Continuous Drain Current:	- 40 A
Configuration:	Single
Unit Weight:	0.352740 oz
Mounting Style:	Through Hole
ECCN	EAR99
Packaging:	Tube
Manufacturer:	IXYS
Minimum Operating Temperature:	- 55 C
Transistor Polarity:	P-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 500 V
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 P-Channel
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTK40P50P.pdf

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Stock code :	562063
Mfg name :	IXYS Corporation
MPN :	IXTK40P50P
Product description :	Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; TO264

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