IXTH80N20L specifications -Ameya360 electronic components purchase network


IXTH80N20L

ACTIVE EAR99
Product description : IXTH80N20L Series 200 V 80 A N-Channel Power Mosfet - TO-247-3
SPQ：30
Datasheet : IXTH80N20L.pdf

Packaging:	Tube
Qg - Gate Charge:	180 nC
Pd - Power Dissipation:	520 W
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Fall Time:	29 ns
Forward Transconductance - Min:	30 S
Series:	IXTH80N20
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	80 A
Rise Time:	44 ns
ECCN	EAR99
Rds On - Drain-Source Resistance:	32 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs - Gate-Source Voltage:	20 V
Unit Weight:	0.056438 oz
Typical Turn-On Delay Time:	29 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	72 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	200 V
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTH80N20L.pdf

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Stock code :	562047
Mfg name :	IXYS Corporation
MPN :	IXTH80N20L
Product description :	IXTH80N20L Series 200 V 80 A N-Channel Power Mosfet - TO-247-3

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