| IXTH60N20L2 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
N-Channel 200 V 60 A 0.045 Ohm Mosfet TO-247
|
||
| 标准包装：30 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 5.3 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-247-3 |
| Height: | 21.46 mm |
| Unit Weight: | 0.229281 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 26 ns |
| Forward Transconductance - Min: | 35 S |
| Series: | IXTH60N20 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 60 A |
| Rise Time: | 23 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 255 nC |
| Pd - Power Dissipation: | 540 W |
| Tradename: | Linear L2 |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 18 ns |
| Length: | 16.26 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 90 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Type: | Linear L2 Power MOSFET |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：