IXTH500N04T2 specifications -Ameya360 electronic components purchase network


IXTH500N04T2

ACTIVE ECL99
Product description : MOSFET N-CH 40V 500A TO-247
SPQ：30
Datasheet : IXTH500N04T2.pdf

Width:	5.3 mm
Rds On - Drain-Source Resistance:	1.6 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.46 mm
Unit Weight:	0.056438 oz
Fall Time:	44 ns
Length:	16.26 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	68 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Type:	TrenchT2 Power MOSFET
ECCN	ECL99
Packaging:	Tube
Qg - Gate Charge:	405 nC
Pd - Power Dissipation:	1 kW
Tradename:	TrenchT2
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Typical Turn-On Delay Time:	37 ns
Forward Transconductance - Min:	75 S
Series:	IXTH500N04
Factory Pack Quantity:	1
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	500 A
Rise Time:	16 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IXTH500N04T2.pdf

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