IXTH26P20P specifications -Ameya360 electronic components purchase network


IXTH26P20P

ACTIVE EAR99
Product description : Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
SPQ：1
Datasheet : IXTH26P20P.pdf

Width:	5.3 mm
Rds On - Drain-Source Resistance:	170 mOhms
Pd - Power Dissipation:	300 W
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	0.229281 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	18 ns
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	46 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 200 V
Transistor Type:	1 P-Channel
ECCN	EAR99
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	21.46 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	21 ns
Length:	16.26 mm
Series:	IXTH26P20
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	26 A
Rise Time:	33 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IXTH26P20P.pdf

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Stock code :	562017
Mfg name :	IXYS Corporation
MPN :	IXTH26P20P
Product description :	Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3

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