| IXTH11P50 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single P-Channel 500 V 750 mOhm 300 W Power Mosfet - TO-247 AD
|
||
| 标准包装：30 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 5.3 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 750 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 0.122 V |
| Configuration: | Single |
| Unit Weight: | 0.229281 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 33 ns |
| Forward Transconductance - Min: | 5 S |
| Series: | IXTH11P50 |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 11 A |
| Rise Time: | 27 ns |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 130 nC |
| Pd - Power Dissipation: | 300 W |
| Package / Case: | TO-247-3 |
| Height: | 21.46 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 35 ns |
| Length: | 16.26 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 35 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 500 V |
| Type: | Standard Power MOSFET |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：