IXTH110N10L2 specifications -Ameya360 electronic components purchase network


IXTH110N10L2

ACTIVE TO-247 (IXTH) EAR99
Product description : N-Channel 100 V 18 mOhm Through Hole Power Mosfet - TO-247-3
SPQ：1
Datasheet : IXTH110N10L2.pdf

FET Feature	Standard
Package / Case	TO-247-3
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Part Status	Active
Manufacturer	IXYS
Series	Linear L2™
Vgs(th) (Max) @ Id	4.5V @ 250µA
Input Capacitance (Ciss) @ Vds	10500pF @ 25V
Rds On (Max) @ Id, Vgs	18 mOhm @ 500mA, 10V
Power - Max	600W
Supplier Device Package	TO-247 (IXTH)
Gate Charge (Qg) @ Vgs	260nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Through Hole
ECCN	EAR99

Datasheet： IXTH110N10L2.pdf

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Stock code :	561992
Mfg name :	IXYS Corporation
MPN :	IXTH110N10L2
Product description :	N-Channel 100 V 18 mOhm Through Hole Power Mosfet - TO-247-3

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