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| 产品描述：
P-Channel 100 V 298 W 197 nC TrenchP Power Mosfet Surface Mount - TO-263AA
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Part Status | Active |
| Manufacturer | IXYS |
| Series | TrenchP™ |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 500mA, 10V |
| Power - Max | 298W |
| Supplier Device Package | TO-263 (IXTA) |
| Gate Charge (Qg) @ Vgs | 197nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 13700pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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