IXTA52P10P specifications -Ameya360 electronic components purchase network


IXTA52P10P

ACTIVE ECL99
Product description : Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
SPQ：1
Datasheet : IXTA52P10P.pdf

Width:	9.65 mm
Rds On - Drain-Source Resistance:	50 mOhms
Pd - Power Dissipation:	300 W
Package / Case:	TO-252-3
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	22 ns
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	38 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 100 V
Transistor Type:	1 P-Channel
ECCN	ECL99
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	4.83 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	22 ns
Length:	10.41 mm
Series:	IXTA52P10
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	52 A
Rise Time:	29 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTA52P10P.pdf

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Stock code :	561968
Mfg name :	IXYS Corporation
MPN :	IXTA52P10P
Product description :	Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263

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