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| 产品描述：
Single N-Channel 1200 V 4.5 Ohm 200 W Power Mosfet - TO-263
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| 标准包装：50 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Part Status | Active |
| Manufacturer | IXYS |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 1.5A, 10V |
| Power - Max | 200W |
| Supplier Device Package | TO-263 (IXTA) |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
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