IXTA120P065T
IXTA120P065T
  • 量产中
  • EAR99
产品描述:
Single P-Channel 65 V 10 Ohm 298 W Power MOSFET - TO-263
标准包装:1
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Packaging: Tube
Qg - Gate Charge: 58 nC
Pd - Power Dissipation: 298 W
Package / Case: TO-252-3
Vgs - Gate-Source Voltage: 15 V
Unit Weight: 0.056438 oz
Fall Time: 21 ns
Manufacturer: IXYS
Transistor Polarity: P-Channel
Brand: IXYS
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 65 V
Transistor Type: 1 P-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 10 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Forward Transconductance - Min: 75 S
Series: IXTA120P065
Factory Pack Quantity: 50
RoHS:  Details
Id - Continuous Drain Current: - 120 A
Rise Time: 28 ns
Maximum Operating Temperature: + 150 C
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