| IXTA08N50D2 | ||
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| 产品描述：
N-Channel 500 V 4.6 Ohm Depletion Mode Mosfet - TO-263-3
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| 标准包装：50 | ||
| 数据手册： |
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| Width: | 10.41 mm |
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| Rds On - Drain-Source Resistance: | 4.6 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 4.83 mm |
| Unit Weight: | 0.056438 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 28 ns |
| Forward Transconductance - Min: | 340 mS |
| Series: | IXTA08N50 |
| Factory Pack Quantity: | 50 |
| Typical Turn-Off Delay Time: | 35 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Type: | Depletion Mode MOSFET |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Qg - Gate Charge: | 12.7 nC |
| Pd - Power Dissipation: | 60 W |
| Package / Case: | TO-252-3 |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 52 ns |
| Length: | 9.65 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 800 mA |
| Rise Time: | 54 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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